Publicação
Phosphorous and boron doping of nc-Si:H thin films deposited on plastic
| Resumo: | Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 °C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (σd=2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below ~50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates. |
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| Autores principais: | Filonovich, Sergej |
| Outros Autores: | Ribeiro, M.; Rolo, Anabela G.; Alpuim, P. |
| Assunto: | Hot-Wire CVD nc-Si:H Phosphine Diborane Low-temperature deposition Doping Plastics |
| Ano: | 2007 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Gas-phase phosphorous and boron doping of hydrogenated nanocrystalline thin films deposited by HWCVD at a substrate temperature of 150 °C on flexible-plastic (polyethylene naphthalate, polyimide) and rigid-glass substrates is reported. The influence of the substrate, hydrogen dilution, dopant concentration and film thickness on the structural and electrical properties of the films was investigated. The dark conductivity of B- and P-doped films (σd=2.8 S/cm and 4.7 S/cm, respectively) deposited on plastic was found to be somewhat higher than that found in similar films deposited on glass. n- and p-type films with thickness below ~50 nm have values of crystalline fraction, activation energy and dark conductivity typical of doped hydrogenated amorphous silicon. This effect is observed both on glass and on plastic substrates. |
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