Publicação
Highly sensitive thermoelectric touch sensor based on p-type SnO x thin film
| Resumo: | Here, the ability of using p-type tin oxide (SnOx) thin films as a thermal sensor has been investigated. Firstly, the thermoelectric performance was optimized by controlling the thickness of the SnOx film from 60 up to 160 nm. A high Seebeck coefficient of +263 mu V K-1 and electrical conductivity of 4.1 x 10(2) (S m(-)(1)) were achieved in a 60 nm thick SnOx film, due to a compact nanostructured film and the absence of the Sn metallic phase, which was observed for the thicker SnOx film leading to a typical thermoelectric transport properties of a n-type Sn film. Moreover, x-ray photoelectron spectroscopy revealed the co-existence of SnO (79.7%) and SnO2 (20.3%) phases in the 60 nm thick SnOx film, while the optical measurements revealed an indirect gap of 1.8 eV and a direct gap of 2.7 eV, respectively. The 60 nm-SnOx thin film have been tested as a thermoelectric touch sensor, achieving a V-signal/V-noise approximate to 20 with a rise time <1 s. Therefore, this work provides an efficient way for developing highly efficient thermal sensors with potential use in display technologies. |
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| Autores principais: | Vieira, Eliana Maria Fernandes |
| Outros Autores: | Silva, José Pedro Basto; Veltruská, Kateřina; Matolín, V.; Pires, A. L.; Pereira, A. M.; Gomes, M. J. M.; Gonçalves, L. M. |
| Assunto: | touch sensor thermoelectric properties p-type semiconductor oxide Seebeck effect tin oxide Ciências Naturais::Ciências Físicas |
| Ano: | 2019 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso restrito |
| Instituição associada: | Universidade do Minho |
| Idioma: | inglês |
| Origem: | RepositóriUM - Universidade do Minho |
| Resumo: | Here, the ability of using p-type tin oxide (SnOx) thin films as a thermal sensor has been investigated. Firstly, the thermoelectric performance was optimized by controlling the thickness of the SnOx film from 60 up to 160 nm. A high Seebeck coefficient of +263 mu V K-1 and electrical conductivity of 4.1 x 10(2) (S m(-)(1)) were achieved in a 60 nm thick SnOx film, due to a compact nanostructured film and the absence of the Sn metallic phase, which was observed for the thicker SnOx film leading to a typical thermoelectric transport properties of a n-type Sn film. Moreover, x-ray photoelectron spectroscopy revealed the co-existence of SnO (79.7%) and SnO2 (20.3%) phases in the 60 nm thick SnOx film, while the optical measurements revealed an indirect gap of 1.8 eV and a direct gap of 2.7 eV, respectively. The 60 nm-SnOx thin film have been tested as a thermoelectric touch sensor, achieving a V-signal/V-noise approximate to 20 with a rise time <1 s. Therefore, this work provides an efficient way for developing highly efficient thermal sensors with potential use in display technologies. |
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