Publicação

Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates

Detalhes bibliográficos
Resumo:	Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energy-dispersive X-ray spectroscopy. Emission spectra of the La co-doped Er/Yb ZnO nanoplates showed an efficiency enhancement of Er ion emission in NIR region around 1550 nm which is a very important wavelength for optical communication technologies. The enhancement mechanism for the NIR emission is discussed in detail. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
Autores principais:	Zamiri, Reza
Outros Autores:	Rebelo, Avito; Ahangar, Hossein Abastabar; Belsley, Michael Scott; Ferreira, J. M. F.
Assunto:	THIN-FILMS ENERGY-TRANSFER ER ELECTROLUMINESCENCE ERBIUM GAN FABRICATION
Ano:	2014
País:	Portugal
Tipo de documento:	artigo
Tipo de acesso:	acesso restrito
Instituição associada:	Universidade de Aveiro
Idioma:	inglês
Origem:	RIA - Repositório Institucional da Universidade de Aveiro

Descrição
Resumo:	Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energy-dispersive X-ray spectroscopy. Emission spectra of the La co-doped Er/Yb ZnO nanoplates showed an efficiency enhancement of Er ion emission in NIR region around 1550 nm which is a very important wavelength for optical communication technologies. The enhancement mechanism for the NIR emission is discussed in detail. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

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