Detalhes bibliográficos
| Resumo: | In this study, nanostructured ceria (CeO2) films are deposited on Si(100) and ITO coated glass substrates by pulsed DC magnetron sputtering using a CeO2 target. The influence on the films of using various gas ambients, such as a high purity Ar and a gas mixture of high purity Ar and O2, in the sputtering chamber during deposition are studied. The film compositions are studied using XPS and SIMS. These spectra show a phase transition from cubic CeO2 to hexagonal Ce2O3 due to the sputtering process. This is related to the transformation of Ce4þ to Ce3þ and indicates a chemically reduced state of CeO2 due to the for mation of oxygen vacancies. TGA and electrochemical cyclic voltammetry (CV) studies show that films deposited in an Ar atmosphere have a higher oxygen storage capacity (OSC) compared to films deposited in the presence of O2. CV results specifically show a linear variation with scan rate of the anodic peak currents for both films and the double layer capacitance values for films deposited in Ar/O2 mixed and Ar atmosphere are (1.6 ± 0.2) 10 4 F and (4.3 ± 0.5) 10 4 F, respectively. Also, TGA data shows that Ar sputtered samples have a tendency to greater oxygen losses upon reduction compared to the films sputtered in an Ar/O2 mixed atmosphere. |
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| Autores principais: | Eltayeb, Asmaa |
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| Outros Autores: | Vijayaraghavan, Rajani K; McCoy, Anthony; Venkatanarayanan, Anita; Yaremchenko, Aleksey A; Surendran, Rajesh; McGlynn, Enda; Daniels, Stephen |
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| Assunto: | CeO2 Oxygen storage capacity Magnetron sputtering Thin films Cyclic voltammetry TGA |
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| Ano: | 2015 |
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| País: | Portugal |
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| Tipo de documento: | artigo |
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| Tipo de acesso: | acesso restrito |
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| Instituição associada: | Universidade de Aveiro |
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| Idioma: | inglês |
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| Origem: | RIA - Repositório Institucional da Universidade de Aveiro |
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