Publicação

Monitoring the junction temperature of an IGBT through direct measurement using a fiber Bragg grating

Detalhes bibliográficos
Resumo:	This paper proposes a new technique to monitor the junction temperature of an insulated gate bipolar transistor (IGBT) through direct measurement using an optical fiber sensor mounted on the chip structure. Some features of the sensor such as electromagnetic immunity, small size and fast response time allow the identification of temperature changes generated by the energy loss during device operation. In addition to the online monitoring of the junction temperature, results show the thermal characteristics of the IGBT, which can be used to develop an accurate model to simulate the heat generated during the device conduction and switching processes.
Autores principais:	Bazzo, João Paulo
Outros Autores:	Lukasievicz, Tiago; Vogt, Marcio; Oliveira, Valmir de; Kalinowsky, Hypolito Jose; Silva, Jean Carlos Cardozo da
Assunto:	Semicondutores - Junções Fibras ópticas Análise térmica Detectores ópticos Semiconductors - Junctions Optical fibers Thermal analysis Optical detectors
Ano:	2013
País:	Brasil
Tipo de documento:	outro
Tipo de acesso:	unknown
Instituição associada:	IBICT
Idioma:	inglês
Origem:	Oasisbr

Descrição
Resumo:	This paper proposes a new technique to monitor the junction temperature of an insulated gate bipolar transistor (IGBT) through direct measurement using an optical fiber sensor mounted on the chip structure. Some features of the sensor such as electromagnetic immunity, small size and fast response time allow the identification of temperature changes generated by the energy loss during device operation. In addition to the online monitoring of the junction temperature, results show the thermal characteristics of the IGBT, which can be used to develop an accurate model to simulate the heat generated during the device conduction and switching processes.

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