Publicação
Effect of impurities on the Raman scattering of 6H-SiC crystals
| Resumo: | Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type. |
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| Autores principais: | Lin,Shenghuang |
| Outros Autores: | Chen,Zhiming; Li,Lianbi; Yang,Chen |
| Assunto: | Raman scattering 6H-SiC impurity |
| Ano: | 2012 |
| País: | Brasil |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | IBICT |
| Idioma: | inglês |
| Origem: | Oasisbr |
| Resumo: | Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type. |
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