Publicação
Hole transport characteristics in pure and doped GaSb
| Resumo: | The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K. |
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| Autores principais: | Messias,L.G.O. |
| Outros Autores: | Marega Jr.,E. |
| Ano: | 2002 |
| País: | Brasil |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | IBICT |
| Idioma: | inglês |
| Origem: | Oasisbr |
| Resumo: | The steady state hole transport properties of GaSb were investigated by the Ensemble Monte Carlo method (EMC). In our model we taken in to account heavy and light hole valence bands, and the following scattering mechanisms: inelastic acoustic phonon; polar optical phonon; nonpolar optical; ionized impurity. The theoretical calculations are compared with available experimental results for the GaSb hole mobility shown good agreement with temperatures from 90K up to 300K. |
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