Publication
High-performance wide bandgap perovskite solar cells fabricated in ambient high-humidity conditions
| Summary: | Lead-halide perovskite solar cells (PSCs) are currently the most promising emergent thin-film photovoltaic technology, having already reached power conversion efficiency (PCE) levels of state-of-the-art wafer-based silicon cells. The class of wide bandgap PSCs has also demonstrated high PCE values, thus becoming highly attractive for top sub-cells in tandem devices constructed with silicon or other types of bottom sub-cells. In this study, wide bandgap double-halide (Cs0.17FA0.83PbI3-xBrx) perovskite absorbers were developed with different bromine content, aiming to obtain bandgap values between 1.66 to 1.74 eV, by a glovebox-free (ambient) procedure. Low-cost inorganic materials, i.e. TiO2 and CuSCN, were used for the electron and hole transport layers, respectively. The 1.70 eV bandgap perovskite resulted in the highest reproducibility and stability (>80% initial PCE after 3500 hours) properties of the PSCs, remarkably attaining 16.4% PCE even with ambient and high humidity (∼70%) fabrication conditions. This journal is |
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| Main Authors: | Menda, Ugur Deneb |
| Other Authors: | Ribeiro, Guilherme; Nunes, Daniela; Calmeiro, Tomás; Águas, Hugo; Fortunato, Elvira; Martins, Rodrigo; Mendes, Manuel J. |
| Subject: | General Materials Science Chemistry (miscellaneous) SDG 7 - Affordable and Clean Energy |
| Year: | 2021 |
| Country: | Portugal |
| Document type: | article |
| Access type: | open access |
| Associated institution: | Universidade Nova de Lisboa |
| Language: | English |
| Origin: | Repositório Institucional da UNL |
| Summary: | Lead-halide perovskite solar cells (PSCs) are currently the most promising emergent thin-film photovoltaic technology, having already reached power conversion efficiency (PCE) levels of state-of-the-art wafer-based silicon cells. The class of wide bandgap PSCs has also demonstrated high PCE values, thus becoming highly attractive for top sub-cells in tandem devices constructed with silicon or other types of bottom sub-cells. In this study, wide bandgap double-halide (Cs0.17FA0.83PbI3-xBrx) perovskite absorbers were developed with different bromine content, aiming to obtain bandgap values between 1.66 to 1.74 eV, by a glovebox-free (ambient) procedure. Low-cost inorganic materials, i.e. TiO2 and CuSCN, were used for the electron and hole transport layers, respectively. The 1.70 eV bandgap perovskite resulted in the highest reproducibility and stability (>80% initial PCE after 3500 hours) properties of the PSCs, remarkably attaining 16.4% PCE even with ambient and high humidity (∼70%) fabrication conditions. This journal is |
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