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Characterisation of Ti/Al multilayered structures with slow positron beams applying a simplified positron depth distribution model

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Detalhes bibliográficos
Resumo:In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.
Autores principais:Naia, M. Duarte
Outros Autores:Gordo, P. M.; Teodoro, O. M. N. D.; Lima, A. P. de; Moutinho, A. M. C.
Assunto:Interfaces Multilayer SIMS Slow positron Thin films General Materials Science Condensed Matter Physics Mechanics of Materials Mechanical Engineering
Ano:2010
País:Portugal
Tipo de documento:documento de conferência
Tipo de acesso:acesso aberto
Instituição associada:Universidade Nova de Lisboa
Idioma:inglês
Origem:Repositório Institucional da UNL
Descrição
Resumo:In this work the depth of interfaces in multilayered structures was estimated. The fractions of positron annihilation as function of the implantation energy were estimated from an S-W plot and then converted into a function of the sample depth through the positron implantation profile in the multilayer system computed from a reduced positron profile. The results of this method in Ti/Al samples are comparable to those using the common analysis based on positron diffusion equations. The positron analyses results were compared with SIMS profiles for the same samples.

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