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Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films

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Resumo:Nanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications.
Autores principais:Cerqueira, M. F.
Outros Autores:Stepikhova, M.; Losurdo, M.; Giangregorio, M. M.; Alves, E.; Monteiro, T.; Soares, Manuel J.; Boemare, C.
Assunto:Photoluminescence Erbium Nanocrystalline silicon Ellipsometry X-ray diffractometry spectroscopic ellipsometry
Ano:2003
País:Portugal
Tipo de documento:artigo
Tipo de acesso:acesso aberto
Instituição associada:Universidade do Minho
Idioma:inglês
Origem:RepositóriUM - Universidade do Minho
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author Cerqueira, M. F.
author2 Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
author2_role author
author
author
author
author
author
author
author_facet Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
author_role author
contributor_name_str_mv RepositóriUM - Universidade do Minho
country_str PT
creators_json_txt [{\"Person.name\":\"Cerqueira, M. F.\"},{\"Person.name\":\"Stepikhova, M.\"},{\"Person.name\":\"Losurdo, M.\"},{\"Person.name\":\"Giangregorio, M. M.\"},{\"Person.name\":\"Alves, E.\"},{\"Person.name\":\"Monteiro, T.\"},{\"Person.name\":\"Soares, Manuel J.\"},{\"Person.name\":\"Boemare, C.\"}]
datacite.contributors.contributor.contributorName.fl_str_mv RepositóriUM - Universidade do Minho
datacite.creators.creator.creatorName.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
datacite.date.Accepted.fl_str_mv 2003-01-01T00:00:00Z
datacite.rights.fl_str_mv http://purl.org/coar/access_right/c_abf2
datacite.subjects.subject.fl_str_mv Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
datacite.titles.title.fl_str_mv Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
dc.contributor.none.fl_str_mv RepositóriUM - Universidade do Minho
dc.creator.none.fl_str_mv Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
dc.date.Accepted.fl_str_mv 2003-01-01T00:00:00Z
dc.format.none.fl_str_mv application/pdf
dc.identifier.none.fl_str_mv https://hdl.handle.net/1822/13958
dc.language.none.fl_str_mv eng
dc.publisher.none.fl_str_mv Elsevier
dc.rights.none.fl_str_mv http://purl.org/coar/access_right/c_abf2
dc.subject.none.fl_str_mv Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
dc.title.fl_str_mv Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
dc.type.none.fl_str_mv http://purl.org/coar/resource_type/c_6501
description Nanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications.
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eu_rights_str_mv openAccess
format article
id rum_0b4cc72178c8efef2bb5d690093531f5
identifier.url.fl_str_mv https://hdl.handle.net/1822/13958
inst_facet_str urn:organizationAcronym:repositorium{{{_:::_}}}Universidade do Minho
instacron_str repositorium
institution Universidade do Minho
instname_str Universidade do Minho
language eng
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oai_identifier_str oai:repositorium.uminho.pt:1822/13958
organization_str_mv urn:organizationAcronym:repositorium
person_str_mv Cerqueira, M. F.
Stepikhova, M.
Losurdo, M.
Giangregorio, M. M.
Alves, E.
Monteiro, T.
Soares, Manuel J.
Boemare, C.
publishDate 2003
publisher.none.fl_str_mv Elsevier
repo_facet_str urn:repositoryAcronym:rum{{{_:::_}}}RepositóriUM - Universidade do Minho
reponame_str RepositóriUM - Universidade do Minho
repository_id_str urn:repositoryAcronym:rum
service_str_mv urn:repositoryAcronym:rum
spelling engElsevierporNanocrystalline silicon thin films doped with erbium were produced by reactive magnetron RF sputtering. Their structural and chemical properties were studied by X-ray diffractometry at grazing incidence, micro-Raman, spectroscopic ellipsometry and Rutherford Backscattering Spectroscopy, respectively. Films with different crystalline fraction and crystallite size were deposited. Since the luminescence efficiency of Er-doped nc-Si films is strongly influenced by the microstructure and impurity content (i.e. H, O, Er), the photoluminescence characteristics are discussed in terms of the microstructure. The novelty of these films, if compared to usually investigated structures with the nanocrystals embedded in SiO2, is their relative high conductivity, which makes them attractive for device applications.application/pdfporInfluence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin filmsCerqueira, M. F.Stepikhova, M.Losurdo, M.Giangregorio, M. M.Alves, E.Monteiro, T.Soares, Manuel J.Boemare, C.HostingInstitutionOrganizationalRepositóriUM - Universidade do Minhoe-mailmailto:repositorium@usdb.uminho.ptrepositorium@usdb.uminho.ptISSNIsPartOf0026-2692DOIIsPartOf10.1016/S0026-2692(03)00028-420032003-01-01T00:00:00ZHandlehttps://hdl.handle.net/1822/13958http://purl.org/coar/access_right/c_abf2open accessPhotoluminescenceErbiumNanocrystalline siliconEllipsometryX-ray diffractometryspectroscopic ellipsometry278243 bytesliteraturehttp://purl.org/coar/resource_type/c_6501journal articlehttp://purl.org/coar/access_right/c_abf2application/pdfhttps://repositorium.uminho.pt/bitstreams/20261534-be82-405c-b121-87c3ad639334/download
spellingShingle Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
Cerqueira, M. F.
Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
status SINGLETON
subject.fl_str_mv Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
title Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
title_full Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
title_fullStr Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
title_full_unstemmed Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
title_short Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
title_sort Influence of crystals distribution on the photoluminescence properties of nanocrystalline silicon thin films
topic Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
topic_facet Photoluminescence
Erbium
Nanocrystalline silicon
Ellipsometry
X-ray diffractometry
spectroscopic ellipsometry
url https://hdl.handle.net/1822/13958
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