Publicação
Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction
| Resumo: | A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process. |
|---|---|
| Autores principais: | Louro, Paula |
| Outros Autores: | Vieira, Manuela; Vygranenko, Yuri; Fernandes, Miguel; Schwarz, R.; Schubert, M. |
| Assunto: | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| Ano: | 2002 |
| País: | Portugal |
| Tipo de documento: | artigo |
| Tipo de acesso: | acesso aberto |
| Instituição associada: | Universidade Politécnica de Lisboa |
| Idioma: | inglês |
| Origem: | Repositório Científico da Universidade Politécnica de Lisboa |
| _version_ | 1880398358767468544 |
|---|---|
| author | Louro, Paula |
| author2 | Vieira, Manuela Vygranenko, Yuri Fernandes, Miguel Schwarz, R. Schubert, M. |
| author2_role | author author author author author |
| author_facet | Louro, Paula Vieira, Manuela Vygranenko, Yuri Fernandes, Miguel Schwarz, R. Schubert, M. |
| author_role | author |
| contributor_name_str_mv | RCIPL |
| country_str | PT |
| creators_json_txt | [{\"Person.name\":\"Louro, Paula\",\"Person.identifier.cienciaID\":\"E511-8C08-E606\",\"Person.identifier.orcid\":\"0000-0002-4167-2052\",\"Person.identifier.researcherID\":\"U-8346-2017\",\"Person.identifier.scopusAuthorID\":\"8845716400\"},{\"Person.name\":\"Vieira, Manuela\",\"Person.identifier.cienciaID\":\"9516-E25E-BB8E\",\"Person.identifier.orcid\":\"0000-0002-1150-9895\",\"Person.identifier.researcherID\":\"V-7860-2017\",\"Person.identifier.scopusAuthorID\":\"7202140173\",\"Person.identifier.scopusAuthorID\":\"57202593765\"},{\"Person.name\":\"Vygranenko, Yuri\",\"Person.identifier.cienciaID\":\"121C-05B4-3897\",\"Person.identifier.orcid\":\"0000-0002-1819-5606\",\"Person.identifier.scopusAuthorID\":\"6701808217\"},{\"Person.name\":\"Fernandes, Miguel\",\"Person.identifier.cienciaID\":\"DD1B-859F-EB0B\",\"Person.identifier.orcid\":\"0000-0002-0765-474X\",\"Person.identifier.scopusAuthorID\":\"24450183800\"},{\"Person.name\":\"Schwarz, R.\"},{\"Person.name\":\"Schubert, M.\"}] |
| datacite.contributors.contributor.contributorName.fl_str_mv | RCIPL |
| datacite.creators.creator.creatorName.fl_str_mv | Louro, Paula Vieira, Manuela Vygranenko, Yuri Fernandes, Miguel Schwarz, R. Schubert, M. |
| datacite.date.Accepted.fl_str_mv | 2002-04-01T00:00:00Z |
| datacite.date.available.fl_str_mv | 2012-03-22T15:28:44Z |
| datacite.date.embargoed.fl_str_mv | 2012-03-22T15:28:44Z |
| datacite.rights.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| datacite.subjects.subject.fl_str_mv | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| datacite.titles.title.fl_str_mv | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| dc.contributor.none.fl_str_mv | RCIPL |
| dc.creator.none.fl_str_mv | Louro, Paula Vieira, Manuela Vygranenko, Yuri Fernandes, Miguel Schwarz, R. Schubert, M. |
| dc.date.Accepted.fl_str_mv | 2002-04-01T00:00:00Z |
| dc.date.available.fl_str_mv | 2012-03-22T15:28:44Z |
| dc.date.embargoed.fl_str_mv | 2012-03-22T15:28:44Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | http://hdl.handle.net/10400.21/1338 |
| dc.language.none.fl_str_mv | eng |
| dc.publisher.none.fl_str_mv | Elsevier Science SA |
| dc.rights.none.fl_str_mv | http://purl.org/coar/access_right/c_abf2 |
| dc.subject.none.fl_str_mv | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| dc.title.fl_str_mv | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| dc.type.none.fl_str_mv | http://purl.org/coar/resource_type/c_6501 |
| description | A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process. |
| dirty | 0 |
| eu_rights_str_mv | openAccess |
| format | article |
| fulltext.url.fl_str_mv | https://repositorio.ipl.pt/bitstreams/cfcfa99e-3e5c-40b7-af0c-35380bb0f5a2/download |
| id | ripl_d719453166914235bd1b52053389c66c |
| identifier.url.fl_str_mv | http://hdl.handle.net/10400.21/1338 |
| inst_facet_str | urn:organizationAcronym:ipl{{{_:::_}}}Universidade Politécnica de Lisboa |
| instacron_str | ipl |
| institution | Universidade Politécnica de Lisboa |
| instname_str | Universidade Politécnica de Lisboa |
| language | eng |
| network_acronym_str | ripl |
| network_name_str | Repositório Científico da Universidade Politécnica de Lisboa |
| oai_identifier_str | oai:repositorio.ipl.pt:10400.21/1338 |
| organization_str_mv | urn:organizationAcronym:ipl |
| person_str_mv | Louro, Paula Louro, Paula https://www.ciencia-id.pt/E511-8C08-E606 E511-8C08-E606 http://orcid.org/0000-0002-4167-2052 0000-0002-4167-2052 Vieira, Manuela Vieira, Manuela https://www.ciencia-id.pt/9516-E25E-BB8E 9516-E25E-BB8E http://orcid.org/0000-0002-1150-9895 0000-0002-1150-9895 Vygranenko, Yuri Vygranenko, Yuri https://www.ciencia-id.pt/121C-05B4-3897 121C-05B4-3897 http://orcid.org/0000-0002-1819-5606 0000-0002-1819-5606 Fernandes, Miguel Fernandes, Miguel https://www.ciencia-id.pt/DD1B-859F-EB0B DD1B-859F-EB0B http://orcid.org/0000-0002-0765-474X 0000-0002-0765-474X Schwarz, R. Schubert, M. |
| publishDate | 2002 |
| publisher.none.fl_str_mv | Elsevier Science SA |
| repo_facet_str | urn:repositoryAcronym:ripl{{{_:::_}}}Repositório Científico da Universidade Politécnica de Lisboa |
| reponame_str | Repositório Científico da Universidade Politécnica de Lisboa |
| repository_id_str | urn:repositoryAcronym:ripl |
| service_str_mv | urn:repositoryAcronym:ripl |
| spelling | engElsevier Science SAporA series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.application/pdfporBias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunctionPersonalLouro, PaulaDSpacehttp://dspace.org/items/730dc3dd-73eb-428d-b3a6-430085e33585DSpacehttp://dspace.org/items/730dc3dd-73eb-428d-b3a6-430085e33585LouroPaulaCiência IDhttps://www.ciencia-id.ptE511-8C08-E606ORCIDhttp://orcid.org0000-0002-4167-2052Researcher IDhttps://www.researcherid.comU-8346-2017Scopus Author IDhttps://www.scopus.com8845716400PersonalVieira, ManuelaDSpacehttp://dspace.org/items/b77c6785-9cfb-4cd4-90b5-c2b816bd7d11DSpacehttp://dspace.org/items/b77c6785-9cfb-4cd4-90b5-c2b816bd7d11VieiraManuelaCiência IDhttps://www.ciencia-id.pt9516-E25E-BB8EORCIDhttp://orcid.org0000-0002-1150-9895Researcher IDhttps://www.researcherid.comV-7860-2017Scopus Author IDhttps://www.scopus.com7202140173Scopus Author IDhttps://www.scopus.com57202593765PersonalVygranenko, YuriDSpacehttp://dspace.org/items/5471872c-b778-4218-9ac1-677868dd7d43DSpacehttp://dspace.org/items/5471872c-b778-4218-9ac1-677868dd7d43VygranenkoYuriCiência IDhttps://www.ciencia-id.pt121C-05B4-3897ORCIDhttp://orcid.org0000-0002-1819-5606Scopus Author IDhttps://www.scopus.com6701808217PersonalFernandes, MiguelDSpacehttp://dspace.org/items/6a72ab08-83fa-4225-be0e-b827f206a82eDSpacehttp://dspace.org/items/6a72ab08-83fa-4225-be0e-b827f206a82eFernandesMiguelCiência IDhttps://www.ciencia-id.ptDD1B-859F-EB0BORCIDhttp://orcid.org0000-0002-0765-474XScopus Author IDhttps://www.scopus.com24450183800Schwarz, R.Schubert, M.HostingInstitutionOrganizationalRCIPLe-mailmailto:rcaap@sp.ipl.ptrcaap@sp.ipl.ptISSNIsPartOf0924-4247DOIIsPartOf10.1016/S0924-4247(01)00838-X2012-03-22T15:28:44Z2002-04-012002-04-01T00:00:00ZHandlehttp://hdl.handle.net/10400.21/1338http://purl.org/coar/access_right/c_abf2open accessOptical biasHeterostructuresOptoelectronic propertiesNumerical simulation235235 bytesliteraturehttp://purl.org/coar/resource_type/c_6501journal articlehttp://purl.org/coar/access_right/c_abf2application/pdffulltexthttps://repositorio.ipl.pt/bitstreams/cfcfa99e-3e5c-40b7-af0c-35380bb0f5a2/downloadSensors and Actuators A-Physical97-98221226Lausanne |
| spellingShingle | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction Louro, Paula Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| status | SINGLETON |
| subject.fl_str_mv | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| title | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| title_full | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| title_fullStr | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| title_full_unstemmed | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| title_short | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| title_sort | Bias-dependent photocurrent collection in p-i-n a-Si : H/SiC : H heterojunction |
| topic | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| topic_facet | Optical bias Heterostructures Optoelectronic properties Numerical simulation |
| url | http://hdl.handle.net/10400.21/1338 |
| visible | 1 |
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