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PHOTODETECTION, SELF AMPLIFICATION AND DEMUX OPERATION IN TANDEM AMORPHOUS SI-C DEVICES

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Bibliographic Details
Summary:In this paper we report the use of a monolithic system that combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. The device is a double pi’n/pin a-SiC:H heterostructure with optical gate connections for light triggering in different spectral regions. Results show that when a polychromatic combination of different pulsed channels impinges on the device the output signal has a strong nonlinear dependence on the light absorption profile, (wavelength, bit rate and intensity). This effect is due to the self biasing of the junctions under unbalanced light generation of carriers. Self optical bias amplification under uniform irradiation and transient conditions is achieved. An optoelectronic model based on four essential elements: a voltage supply, a monolithic double pin photodiode, optical connections for light triggering, and optical power sources for light bias explains the operation of the optical system.
Main Authors:Vieira, Manuela
Other Authors:Louro, Paula; Vieira, Manuel Augusto; Fantoni, Alessandro; Fernandes, Miguel
Subject:optoelectronic Optical devices; a-SiC heterostructures; optical communications; multiplexing and demultiplexing applications over POF
Year:2013
Country:Portugal
Document type:article
Access type:unknown
Associated institution:Instituto Superior de Engenharia de Lisboa
Language:English
Origin:i-ETC : ISEL Academic Journal of Electronics Telecommunications and Computers
Description
Summary:In this paper we report the use of a monolithic system that combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. The device is a double pi’n/pin a-SiC:H heterostructure with optical gate connections for light triggering in different spectral regions. Results show that when a polychromatic combination of different pulsed channels impinges on the device the output signal has a strong nonlinear dependence on the light absorption profile, (wavelength, bit rate and intensity). This effect is due to the self biasing of the junctions under unbalanced light generation of carriers. Self optical bias amplification under uniform irradiation and transient conditions is achieved. An optoelectronic model based on four essential elements: a voltage supply, a monolithic double pin photodiode, optical connections for light triggering, and optical power sources for light bias explains the operation of the optical system.

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