Thin films of lead-free NaxK1-xNbO3 (NKN) were prepared by pulsed laser deposition (PLD) from ceramic targets of stoichiometric NKN or doped with 6% of lithium niobate (LN). At a deposition temperature of 600 degrees C a strong dependence of film morphology on laser fluence is revealed by SEM microscopy. Optical properties like band gap and index of refraction were obtained through transmission measurements and analysis based on the Tauc model. The results were compared to spectral ellipsometry using a fit to the Tauc-Lorentz model, and slightly smaller band gap values were obtained. C-V characteristics of sandwich structures yielded high permittivity of 380 in pure NKN films and tunability at 1kHz of 3.2% at 1.5 MV/m applied electric field.

Photocapacitance measurements were performed on amorphous silicon p–i–n detectors before and after particle irradiation with 1.5 MeV 4 He+ ions. The spatial resolution across a degraded spot is similar to the one obtained in photocurrent scans and is of the order of the diameter of the scanning laser beam. We monitored the transient capacitance after applying short laser pulses to deduce trap energies of 0.64 eV. Photocapacitance measurements as a function of the applied bias, the measurement frequency up to 1 MHz, and the wavelength of laser light are discussed. The reduction in photocapacitance signal and the shift of the cut-off frequency after ion bombardment are correlated with the change in transport properties.

We discuss the operation of a new type of optical sensor (MISCam) based on a metal-insulator-semiconductor (MIS) structure. The operation principle relies on light-induced changes of the band bending and barrier height at the interface between semiconductor and insulator. An image is obtained from the quenching of the ac signal in analogy to the principle of the laser-scanned photodiode (LSP). Lateral resolution depends on the semiconductor material chosen. We have characterised the MIS structures by C-V, I-V, and spectral response measurements testing different types of insulators like a-Si3N4, SiO2, and AlN. The presence of slow interface charges allows for image memory. Colour sensors can be realised by controlling sign and magnitude of the electric fields in the base and the interface region.

A erosão é a forma mais prejudicial de degradação do solo. Além de reduzir sua capacidade produtiva para as culturas, ela pode causar sérios danos ambientais, como assoreamento e poluição das fontes de água. Contudo, usando adequados sistemas de manejo do solo e bem planejadas práticas conservacionistas de suporte, os problemas de erosão podem ser satisfatoriamente resolvidos. Com o propósito de obter informações quantitativas sobre o assunto, para servirem de guia nos planejamentos conservacionistas de uso da terra, realizou-se um experimento de erosão sob chuva natural, em Latossolo Vermelho distroférrico típico textura muito argilosa, no município de Santo Ângelo, região das Missões (RS), de dezembro de 1994 a maio de 1996, objetivando quantificar as perdas de solo e água causadas por erosão hídrica. Os tratamentos consistiram dos métodos de preparo do solo convencional, reduzido e semeadura direta, avaliados sob as condições "solo com fertilidade corrigida" nas classes de declividade de 0-0,04; 0,04-0,08 e 0,08-0,12 m m-1 (com gradientes médios de, respectivamente, 0,035; 0,065 e 0,095 m m-1) e "solo com fertilidade atual" na classe de declividade de 0,04-0,08 m m-1. As operações de preparo do solo e semeadura foram efetuadas todas transversalmente ao declive, exceto para o tratamento-testemunha (preparo convencional, sem cultivo, continuamente descoberto e sem crosta), no qual as operações de aração e gradagem foram realizadas no sentido do declive. A seqüência de culturas utilizada na avaliação da erosão foi constituída de dois ciclos culturais de soja (Glycine max, L.), no período de primavera-verão de 1994/95 e 1995/96, e um de aveia preta (Avena strigosa, S.), no período de outono-inverno de 1995. O índice de erosividade das chuvas (EI30) calculado no período experimental (1,5 ano) foi de 10.236 MJ mm ha-1 h-1 e concentrou-se, repetidamente, em 1995 e 1996, nos meses de janeiro a março, perfazendo, acumuladamente nestes duplos períodos, 70 % do total. Perdas significativas de solo por erosão hídrica (até 80 Mg ha-1 em um único ciclo cultural) ocorreram somente no preparo convencional sem cultivo e estabelecido no sentido do declive (testemunha), embora o solo na parcela tenha apresentado um valor de erodibilidade muito baixo (fator K igual a 0,0091 Mg ha h MJ-1 mm-1 ha-1 ). Sob cultivo, porém em valores bem mais baixos, as perdas de solo continuaram sendo as maiores no preparo convencional (ao redor de 13,0 Mg ha-1 em 1,5 ano), notadamente nas classes de declividade média e alta, ficando o preparo reduzido com as intermediárias (ao redor de 4,0 Mg ha-1 em 1,5 ano) e a semeadura direta com as menores (ao redor de 1,0 Mg ha-1 em 1,5 ano), enquanto as perdas de água foram todas muito baixas e pouco diferenciadas. A condição "solo com fertilidade corrigida" aumentou muito a quantidade de fitomassa aérea produzida pelas culturas e, conseqüentemente, a massa de resíduos culturais, a percentagem de cobertura morta do solo e as perdas de solo por erosão hídrica, especialmente no preparo convencional; contudo, ela praticamente não influenciou as perdas de água. Apesar das operações de preparo do solo e semeadura em contorno, fertilidade do solo melhorada e alta resistência do solo à erosão, o sistema de produção aveia preta-soja em preparo convencional apresentou, em declives superiores a 0,04 m m-1, perdas anuais de solo por erosão muito próximas ao limite tolerável, já no curto comprimento de rampa de 21 m utilizado nas parcelas experimentais deste estudo.

A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under different light excitation and reverse bias conditions. The spectral and pulse response characteristics are analysed. The current amplification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The optical sensor output characteristics and some possible device applications are presented.

With two interfering pulses from the fourth harmonic of a Nd–YAG laser we burnt a periodic lattice structure into the surface of GaN thin films. The lattice period of this permanent grating could be controlled between less than one and several tens of microns. Above the decomposition threshold, nitrogen evades from the sample surface, and the residual metallic gallium accumulates in the form of tiny droplets at the surfaces. The patterned structure shows structural similarities with microcavities. The question arises if the residual metallic gallium may act as a partially reflecting mirror. To test this hypothesis, we studied the steady-state and transient photoluminescence through the modulation of light emerging from the ubiquitous broad “yellow” photoluminescence band. The microlattice is evidenced by energy-equidistant spontaneous emission enhancement peaks in the steady-state photoluminescence spectra. We suggest that the partial reflection due to the residual metallic gallium leads to the observed enhancement effect.

We present measurements and numerical simulation of a-Si:H p-i-n detectors with a wide range of intrinsic layer thickness between 2 and 10 pm. Such a large active layer thickness is required in applications like elementary particle detectors or X-ray detectors. For large thickness and depending on the applied bias, we observe a sharp peak in the spectral response in the red region near 700 nm. Simulation results obtained with the program ASCA are in agreement with the measurement and permit the explanation of the experimental data. In thick samples holes recombine or are trapped before reaching the contacts, and the conduction mechanism is fully electron dominated. As a consequence, the peak position in the spectral response is located near the optical band gap of the a-Si:H i-layer. (C) 2009 Elsevier B.V. All rights reserved.

An optimized ZnO:Al/a-pin SixCl1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed. The LSP utilizes light induced depletion layers as detector and a laser beam for readout. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Experimental data reveal that the large optical gap and the low conductivity of the doped a-SixC1-x:H layers are responsible by an induced inversion layer at the illuminated interfaces which blocks the carrier collection. These insulator-like layers act as MIS gates preventing image smearing. The physical background of the LSP is discussed.

A series of large area single layers and glass/ZnO:AVp(SixC1-x:H)/i(Si:H)/n(SixC1-x:H)/AI (0 < x < 1) heterojunction cells were produced by plasma-enhanced chemical vapour deposition (PE-CVD) at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage (J-V) and capacitance-voltage (C-V) characteristics. For the heterojunction cells atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High series resistances around 106 Q are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the structures. Further comparison with the sensor performance gave satisfactory agreement. Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

An optimized ZnO:Al/a-pin SixC1-x:H/Al configuration for the laser scanned photodiode (LSP) imaging detector is proposed and the read-out parameters improved. The effect of the sensing element structure, cell configuration and light source flux are investigated and correlated with the sensor output characteristics. Data reveals that for sensors with wide band gap doped layers an increase on the image signal optimized to the blue is achieved with a dynamic range of two orders of magnitude, a responsivity of 6 mA W-1 and a sensitivity of 17 muW cm(-2) at 530 nm. The main output characteristics such as image responsivity, resolution, linearity and dynamic range were analyzed under reverse, forward and short circuit modes. The results show that the sensor performance can be optimized in short circuit mode. A trade-off between the scan time and the required resolution is needed since the spot size limits the resolution due to the cross-talk between dark and illuminated regions leading to blurring effects.