O autor deste trabalho procura apontar a significação das expressões bom senso e senso jurídico; menciona, além disso, diversas posições, muito interessantes, a respeito do tema. Afigura-se correto o entendimento de que, no universo do Direito, é sem dúvida fundamental, em não poucos casos, a utilização do bom senso.  

In recent years, the number of patients requiring acute cardiac care has increased, with progressively more complex cardiovascular conditions, often complicated by acute or chronic non-cardiovascular comorbidities, which affects the management and prognosis of these patients. Coronary care units have evolved into cardiac intensive care units, which provide highly specialized health care for the critical heart patient. In view of the limited human and technical resources in this area, we consider that there is an urgent need for an in-depth analysis of the organizational model for acute cardiac care, including the definition of the level of care, the composition and training of the team, and the creation of referral networks. It is also crucial to establish protocols and to adopt safe clinical practices to improve levels of quality and safety in the treatment of patients. Considering that acute cardiac care involves conditions with very different severity and prognosis, it is essential to define the level of care to be provided for each type of acute cardiovascular condition in terms of the team, available techniques and infrastructure. This will lead to improvements in the quality of care and patient prognosis, and will also enable more efficient allocation of resources.

Os autores apresentam três casos de mielite transversa de instalação aguda em doentes jovens, salientando a possível gravidade do quadro neurológico, a necessidade de excluir uma causa potencialmente tratável e a controvérsia da terapêutica com corticosteroides.

In recent years, there has been a resurgence in the interest in the use of ZnO (Eg ∼ 3.37 eV) as a material for a wide range of opto-emitter applications spanning visible and short wavelengths. Bulk, thin films and nanomaterials obtained using different synthesis methods have been investigated for optoelectronic and biotechnological device applications. Nominally undoped bulk samples typically present a myriad-structured near-band-edge recombination, mainly due to free/bound excitons and donor–acceptor pair transitions. Furthermore, deep level emission due to intrinsic defects and extrinsic impurities, such as transition metal ions, are commonly observed in different grades of bulk ZnO samples. Undoped thin film and ZnO nanocrystal samples also present optically-active centres due to the presence of native and extrinsic defects. Continuing improvement in device performance hinges on improved understanding of the role of these defects present in ZnO samples. In this work a correlation between the optical centres was observed between nominally-undoped bulk, thin films and nanocrystal ZnO. We also observed a correlation between the structural properties and ion optical activation for single crystal samples which were intentionally-doped with rare earth ions (Tm, Er, Eu and Tb) either (a) by ion-implantation or (b) during synthesis. For the doped ZnO nanocrystals, intra-ionic recombination and XRD data suggest that the ions are in a crystalline environment.

ZnO, with its high energy bandgap of ∼3.3 eV, has been in the last years one of the most studied materials. The main driving force of the research performed in this oxide semiconductor is directly related to the ability and potentialities of ZnO for optoelectronic and spintronic applications. In the domain of optoelectronics, short wavelength light emitting devices are amongst the most important devices of compound semiconductors. Rare earth (RE) doping appears as an alternative route to photonic applications. In this work we discuss the role of defects in optical activation and structural properties of ion implanted RE doped ZnO single crystals.

We report on the up-converted ultraviolet near-band edge emission of bulk ZnO generated by visible and ultraviolet photons with energies below the band gap. This up-converted photoluminescence was observed in samples intentionally doped with Tm ions, suggesting that the energy levels introduced by the rare earth ion in the ZnO band gap are responsible for this process.

We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238 eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67 meV and deep acceptor levels at 250 and 232 meV.

We report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the damage raises the minimum yield (χmin) from 2% to 50%. Annealing in an oxidizing atmosphere leads to a reduction of the implantation damage, which is fully recovered after annealing at 1050 °C with a χmin∼3% in the implanted region. With extrinsic excitation, red Fe-related emission is observed at low temperatures. The intensity is dependent on the annealing conditions. For samples annealed in air, the luminescence can be detected up to 120 K. When a comparison is made between unimplanted and post-implanted annealed samples, noticeable changes on near-band-edge and deep-level photoluminescence spectra are observed. A thermally populated structured green emission could be observed in the sample annealed in air, as shown by the temperature-dependent photoluminescence excitation studies.

Single crystalline SrTiO3 samples were implanted with Er ions of 150 keV at room temperature with fluences of 5x10(14) and 5x10(15) . Annealing treatments were carried out both in reducing and oxidising atmospheres to recover the implantation damage. Infrared 1.54 mum Er3+ luminescence between the two lowest spin-orbit levels I-4(13/2) --> I-4(15/2) as well as emission from higher excited states S-4(3/2) --> I-4(15/2) , F-4(9/2) --> I-4(15/2) and S-4(3/2) --> I-4(13/2) were observed in the implanted samples with highest fluence, annealed either in air or in vacuum. Multiple site location of Er3+ ion is discussed and compared with RBS/C and emission channelling results that indicate that Er goes to Sr and Ti sites.

Sapphire single crystals implanted with different fluences of cobalt and subjected to annealing treatments in vacuum and in air during 1 h at 1000 degreesC were studied by optical and structural techniques. At room temperature the absorption mainly occurs in the ultraviolet (UV) being the luminescence dominated by a UV/blue broad emission band and a highly structured red emission. Structural analysis indicates that metallic precipitates, CoAl2O4 and CoO phases are present in the implanted and annealed samples depending either on the fluence and on the annealing atmosphere. The observed luminescence cannot be correlated with intra-ionic Co2+ and Co3+ in an Al3+ site in the sapphire lattice and a tentative assignment of the observed emission lines to the presence of aggregates is made.